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CVD Graphene on Silicon Substrate

As low as $100.00 $0.00
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SKU# 105

Graphene transferred to silicon substrate

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Product Detail

CAS No.: 7782-42-5 (graphene), 7440-21-3 (silicon)

ACS Material produces ultra-thin graphene on copper substrates using CVD. We then use PMMA method to transfer the copper-based graphene to a silicon substrate. Graphene on silicon substrate is available in four graphene thicknesses: 1 layer, 2 layers, 3-5 layers, and 6-8 layers. We offer 1cm x 1cm substrates and 1in x 1in substrates. We are also able to transfer graphene on these substrates using metal-assisted exfoliation (MEA) method. Please contact us today for details on our graphene on silicon substrate products. 

Our exceptional graphene is suitable for all types of research. Graphene on silicon is paving the way to industrialization of graphene. All our CVD graphene samples conform to a stringent quality controls to ensure excellent consistency and reproducibility. We have single-, double-, and multilayer graphene sheets transferred onto silicon substrates. Research laboratories around the world trust ACS Material to provide the highest-quality graphene available on the market at the most reasonable prices. Shop ACS Material today.

Sheet Resistance <600Ω/sq
Custom Order <300Ω/sq
Transparency >95%

ACS Material can also provide graphene sheets made by CVD Method and Metal Assisted Exfoliation (MAE Process). Buy Now>>

Preparation Method:

  1. Copper based graphene is prepared by CVD method.
  2. Graphene is transferred from copper to silicon substrate.

Silicon Wafer:

Wafer Tickness:

625 µm

Resistivity:

<0.01 ohm-cm

Type/Dopant:

P

Orientation:

<100>

Front Surface:

Polished

Back Surface:

Etched

Conditions for safe storage


Keep the products in a dry and low oxygen (or oxygen-free) container at moderate temperature (<30°C).

Low Oxygen Container

 

Disclaimer: ACS Material LLC believes that the information on our website is accurate and represents the best and most current information available to us. ACS Material makes no representations or warranties either express or implied, regarding the suitability of the material for any purpose or the accuracy of the information listed here. Accordingly, ACS Material will not be responsible for damages resulting from use of or reliance upon this information.

FAQ

1.) Would you have any detail about the chemical composition of the silicon substrate itself? It's purity and % of oxygen within it for instance?

The Silicon wafers are doped with boron, with a doping concentration of 8*10^18/cm3; graphene on silicon wafers or silicon oxide wafers is insensitive to water and oxygen, and only graphene on copper substrates is sensitive to water and oxygen. 

2.) Could you please let me know the mobility of The CVD Graphene on SiO2 Substrate (SKU#CVSO1P4D)?

The mobility of the CVD Graphene on SiO2 Substrate (SKU#CVSO1P4D) is ~1500.

3.) What is the grain size of graphene of this product?

CVD Graphene on SiO2 Substrate has a grain size of about 50 microns.

4.) Is the SiO2 on the backside of the substrate a natural oxide film?

It is not a natural oxide as the SiO2 is grown on the substrate. In addition, the backside SiO2 is also the same size as the topside. Please kindly refer to the SiO2 film thickness.

5.) Is the graphene on Silicon have no native Oxide?

Our product does not go through oxidation but it does have native Oxide (which is a tiny amount), however, if needed, we are able to customize it by removing the native Oxide.

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